Dr. Munaf Rahimo joined ABB Switzerland in 2000 and has been involved in the research and development of power semiconductor devices for high voltage power electronics applications.
He became an ABB Corporate Executive Engineer in 2012 with the main focus on advanced power semiconductors for grid systems such as HVDC and FACTS applications. With more than 25 years of accumulated experience in the topic including more than 20 years in industry, he has worked with many device concepts such as MOSFETs, Diodes, IGBTs, IGCTs and Thyristors. He pioneered and contributed to a number of breakthrough device designs exhibiting higher power handling capabilities, reduced losses and increased robustness. He also pioneered the world first high voltage reverse conducting IGBT which was demonstrated recently in ABB’s ground breaking Hybrid HVDC breaker. He is currently strongly involved in the development of next generation devices based on both Silicon and wide-bandgap semiconductors such as Silicon Carbide. He has more than 80 patent families with and has also authored and co-authored over 150 conference and journal publications in his field of speciality.